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Mex-Wcalc: ic_microstrip_syn
ic_microstrip_syn - Integrated circuit microstrip transmission line synthesis
SYNOPSIS
[w_out, h_out, tox_out, l_out] =
ic_microstrip_syn(z0, w, h, l, tmet, rho, rough, er, tand, f, flag)
PARAMETERSINPUT PARAMETERS
- z0
: desired characteristic impedance (Ohms)
- w
: width of ic_microstrip line (meters)
- h
: substrate thickness (meters)
- l
: lentgh of ic_microstrip line (meters)
- tmet
: metal thickness (meters)
- rho
: resistivity of wire (relative to copper)
- rough
: conductor surface roughness (meters-rms)
- er
: substrate relative permitivitty
- tand
: substrate loss tangent
- f
: synthesis frequency (Hz)
- flag
: indicates which parameters should be optimized
- flag=1 : synthesize the metal width
- flag=1 : synthesize the substrate thickness
- flag=2 : synthesize the oxide thickness
OUTPUT VALUES
- w_out
: calculated metal width
- h_out
: calculated substrate thickness
- tox_out
: calculated oxide thickness
- l_out
: calculated metal length
DESCRIPTION
Function to synthesize the physical dimenstions of a single
ic_microstrip transmission line to achieve a desired characteristic
impedance and electrical length. The desired characteristic
impedance and some of the physical
dimensions of the ic_microstrip line are given as inputs and the
remaining dimensions are calculated.
The model accounts for dispersion (frequency dependent propagation
velocity).
|<--W-->|
_______
| metal | <- tmet,rho,rough
----------------------------------------------
{************** Oxide (tox,eox) **************
----------------------------------------------
( substrate /|\ (
) es,sigmas H | )
( \|/ (
----------------------------------------------
XXXXXXXXXXXXXXXXXX ground XXXXXXXXXXXXXXXXXXXX
EXAMPLE % desired impedance
z0=75;
% desired electrical length (degrees)
elen=90;
% micron to meters conversion factor
sf=1.0e-6;
% width
w=160e-6;
% length
l=1000e-6;
% oxide thickness
tox=1.0e-6;
% oxide relative dielectric constant
eox=4.0;
% substrate thickness
h=250e-6;
% substrate relative dielectric constant
es=11.8;
% substrate conductivity (1/(ohm-m))
sigmas=10;
% metal thickness
tmet=1.6e-6;
% metal resitivity (ohm-m)
rho=3e-8;
% metal surface roughness
rough=0;
% frequency
f=2.4e9;
% synthesize width
flag=0;
[w_out,h_out,tox_out,l_out] = ...
ic_microstrip_syn(z0,elen,w,l,tox,eox,h,es,sigmas,tmet,rho,rough,f,flag);
disp(sprintf('w = %8.3g um', w_out*1e6));
disp(sprintf('h = %8.3g um', h_out*1e6));
disp(sprintf('tox = %8.3g um', tox_out*1e6));
disp(sprintf('l = %8.3g um', l_out*1e6));
SEE ALSOair_coil_calc
air_coil_syn
coax_calc
coax_syn
coupled_microstrip_calc
coupled_microstrip_syn
ic_microstrip_calc
ic_microstrip_syn
microstrip_calc
microstrip_syn
stripline_calc
stripline_syn
AUTHOR
Dan McMahill
BUGS
None known
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